Method for transferring a mark pattern to a substrate, a calibration method, and a lithographic apparatus
US10191390B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 27, 2016 |
| Grant date | Jan 29, 2019 |
| Priority date | — |
| Expiry date | Jun 27, 2036 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F9/708
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method including: providing a reference substrate with a first mark pattern; providing the reference substrate with a first resist layer on the reference substrate, wherein the first resist layer has a minimal radiation dose needed for development of the first resist; using a reference patterning device to impart a radiation beam with a second mark pattern in its cross-section to form a patterned radiation beam; and exposing a target portion of the first resist layer of the reference substrate n times to said patterned radiation beam to create exposed areas in the target portion of the first resist layer in accordance with the second mark pattern that have been subjected to an accumulated radiation dose above the minimal radiation dose of the first resist layer, wherein n is an integer with a value of at least two.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.