Self-assembled monolayer blocking with intermittent air-water exposure
US10192752B2 · kind B2 · utility
3Cited by
8References
20Claims
0Family size
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Key dates
| Filing date | Mar 1, 2017 |
| Grant date | Jan 29, 2019 |
| Priority date | — |
| Expiry date | Mar 1, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76849
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Implementations described herein generally relate to processes for the fabrication of semiconductor devices in which a self-assembled monolayer (SAM) is used to achieve selective area deposition. Methods described herein relate to alternating SAM molecule and hydroxyl moiety exposure operations which may be utilized to form SAM layers suitable for blocking deposition of subsequently deposited materials.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.