Gate contact structure over active gate and method to fabricate same
US10192783B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 15, 2016 |
| Grant date | Jan 29, 2019 |
| Priority date | — |
| Expiry date | Sep 15, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76834
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Gate contact structures disposed over active portions of gates and methods of forming such gate contact structures are described. For example, a semiconductor structure includes a substrate having an active region and an isolation region. A gate structure has a portion disposed above the active region and a portion disposed above the isolation region of the substrate. Source and drain regions are disposed in the active region of the substrate, on either side of the portion of the gate structure disposed above the active region. A gate contact structure is disposed on the portion of the gate structure disposed above the active region of the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.