Methods of fabricating contacts for cylindrical devices

US10192787B1 · kind B1 · utility

Assignee

• Spin Transfer Technologies, Inc. · US

Inventors

• Gian Sharma · Fremont, US
• Amitay Levi · Cupertino, US
• Kuk-Hwan Kim · Milpitas, US

Key dates

• Filing date: Jan 8, 2018
• Grant date: Jan 29, 2019
• Expiry date: Jan 8, 2038

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N50/10

Abstract

A device having two transistors with dual thresholds, and a method of fabricating the device, including fabricating a silicide source, a conductive layer, and contacts to a plurality of layers of the device, is provided. The device has a core and a plurality of layers that surround the core in succession, including a first layer, a second layer, a third layer, and a fourth layer. The device further comprises a first input terminal coupled to the core, the first input terminal being configured to receive a first voltage and a second input terminal coupled to the fourth layer, the second input terminal being configured to receive a second voltage. The device comprises a common source terminal coupled to the core and the fourth layer. A memory device, such as an MTJ, may be coupled to the device.