Identifying the defective layer of a yield excursion through the statistical analysis of scan diagnosis results
US10198548B2 · kind B2 · utility
1Cited by
3References
18Claims
0Family size
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Key dates
| Filing date | Feb 23, 2009 |
| Grant date | Feb 5, 2019 |
| Priority date | — |
| Expiry date | Jul 10, 2029 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG06F2111/08
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Yield excursions in the manufacturing process today require an expensive, long and tedious physical failure analysis process to identify the root cause. Techniques are disclosed herein for efficiently identifying the root-cause of a manufacturing yield excursion by analyzing fail data collected from the production test environment. In particular, statistical hypothesis testing is used in a novel way to analyze logic diagnosis data along with information on physical features in the design layout and reliably identify the cause of the yield excursion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.