Cleaning method
US10199221B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 22, 2017 |
| Grant date | Feb 5, 2019 |
| Priority date | — |
| Expiry date | Dec 22, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/334
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Implementations of the present disclosure generally relate to methods and apparatuses for epitaxial deposition on substrate surfaces. More particularly, implementations of the present disclosure generally relate to methods and apparatuses for surface preparation prior to epitaxial deposition. In one implementation, a method of processing a substrate is provided. The method comprises etching a surface of a silicon-containing substrate by use of a plasma etch process, where at least one etching process gas comprising chlorine gas and an inert gas is used during the plasma etch process and forming an epitaxial layer on the surface of the silicon-containing substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.