Christopher S. Olsen
89Patents
10h-index
106Co-inventors
81Inventor score
Filing activity: May 12, 1999 → May 2, 2024
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6653200B2 | Trench fill process for reducing stress in shallow trench isolation | Electricity | 37 | Expired |
| US6313466A | Method for determining nitrogen concentration in a film of nitrided oxide material | Electricity | 29 | Expired |
| US7910497B2 | Method of forming dielectric layers on a substrate and apparatus therefor | Electricity | 24 | Active |
| US6150234A | Trench-diffusion corner rounding in a shallow-trench (STI) process | Electricity | 21 | Expired |
| US7429540B2 | Silicon oxynitride gate dielectric formation using multiple annealing steps | Electricity | 21 | Expired |
| US8323754B2 | Stabilization of high-k dielectric materials | Electricity | 19 | Active |
| US7078302B2 | Gate electrode dopant activation method for semiconductor manufacturing including a laser anneal | Electricity | 17 | Expired |
| US7972441B2 | Thermal oxidation of silicon using ozone | Electricity | 15 | Expired |
| US7122454B2 | Method for improving nitrogen profile in plasma nitrided gate dielectric layers | Emerging Cross-Sectional Technologies | 12 | Expired |
| US10861693B2 | Cleaning method | Electricity | 11 | Active |
| US7429538B2 | Manufacturing method for two-step post nitridation annealing of plasma nitrided gate dielectric | Electricity | 8 | Expired |
| US7902018B2 | Fluorine plasma treatment of high-k gate stack for defect passivation | Electricity | 8 | Active |
| US9054048B2 | NH3 containing plasma nitridation of a layer on a substrate | Electricity | 7 | Active |
| US8492292B2 | Methods of forming oxide layers on substrates | Electricity | 7 | Active |
| US7727828B2 | Method for fabricating a gate dielectric of a field effect transistor | Electricity | 7 | Active |
| US7645710B2 | Method and apparatus for fabricating a high dielectric constant transistor gate using a low energy plasma system | Electricity | 7 | Active |
| US7972933B2 | Method of selective nitridation | Emerging Cross-Sectional Technologies | 6 | Active |
| US9683308B2 | Method and apparatus for precleaning a substrate surface prior to epitaxial growth | Chemistry; Metallurgy | 6 | Active |
| US8409353B2 | Water cooled gas injector | Electricity | 6 | Active |
| US7888217B2 | Method for fabricating a gate dielectric of a field effect transistor | Emerging Cross-Sectional Technologies | 5 | Active |
| US8043981B2 | Dual frequency low temperature oxidation of a semiconductor device | Electricity | 4 | Active |
| US9123758B2 | Gas injection apparatus and substrate process chamber incorporating same | Emerging Cross-Sectional Technologies | 4 | Active |
| US8808564B2 | Method and apparatus for selective nitridation process | Electricity | 4 | Active |
| US8168462B2 | Passivation process for solar cell fabrication | Emerging Cross-Sectional Technologies | 4 | Active |
| US9870921B2 | Cleaning method | Electricity | 4 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.