Methods for selective deposition of metal silicides via atomic layer deposition cycles

US10199230B2 · kind B2 · utility

Assignee

• Applied Materials, Inc. · US

Inventors

• Seshadri Ganguli · Sunnyvale, US
• Yixiong Yang · San Jose, US
• Bhushan Zope · Phoenix, US
• Xinyu Fu · Pleasanton, US
• Avgerinos V. Gelatos · Scotts Valley, US
• Guoqiang Jian · San Jose, US
• Bo Zheng · Sunnyvale, US

Key dates

• Filing date: Jul 2, 2015
• Grant date: Feb 5, 2019
• Expiry date: Jul 2, 2035

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L23/53266
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Methods for selectively depositing a metal silicide layer are provided herein. In some embodiments, a method of selectively depositing a metal silicide layer includes: (a) providing a substrate having a first layer to a process chamber, wherein the first layer comprises a first surface and a feature formed in the first surface comprising an opening defined by one or more sidewalls and a bottom surface wherein the sidewalls comprise one of silicon oxide or silicon nitride and wherein the bottom surface comprises at least one of silicon or germanium; (b) exposing the substrate to a precursor gas comprising a metal halide; (c) purging the precursor gas from the process chamber using an inert gas; (d) exposing the substrate to a silicon containing gas; (e) purging the silicon containing gas from the process chamber using an inert gas; (f) repeating (b)-(e) to selectively deposit a metal silicide along the bottom surface to a predetermined thickness; and (g) annealing the substrate after depositing the metal silicide layer.