Inventor · San Jose, CA, US

Yixiong Yang

53Patents
3h-index
109Co-inventors
65Inventor score

Filing activity: Oct 6, 2014 → Feb 20, 2024

Most-cited inventions

PatentTitleAreaCited byStatus
US10407771B2 Atomic layer deposition chamber with thermal lid Electricity 7 Active
US9748354B2 Multi-threshold voltage structures with a lanthanum nitride film and methods of formation thereof Electricity 4 Active
US10199230B2 Methods for selective deposition of metal silicides via atomic layer deposition cycles Electricity 3 Active
US11715667B2 Thermal process chamber lid with backside pumping Electricity 2 Active
US11289579B2 P-type dipole for p-FET Electricity 2 Active
US9595466B2 Methods for etching via atomic layer deposition (ALD) cycles Electricity 2 Active
US11384432B2 Atomic layer deposition chamber with funnel-shaped gas dispersion channel and gas distribution plate Electricity 2 Active
US11437271B2 Seamless gap fill Electricity 1 Active
US11245022B2 Integrated dipole flow for transistor Electricity 1 Active
US11658218B2 P-type dipole for p-FET Electricity 1 Active
US11335591B2 Thermal process chamber lid with backside pumping Electricity 1 Active
US11062900B2 Method of reducing effective oxide thickness in a semiconductor structure Electricity 1 Active
US11018009B2 Tuning work function of p-metal work function films through vapor deposition Electricity 0 Active
US10755947B2 Methods of increasing selectivity for selective etch processes Electricity 0 Active
US11894233B2 Electronic device having an oxygen free platinum group metal film Electricity 0 Active
US12288717B2 Metal based hydrogen barrier Electricity 0 Active
US11997849B2 V-NAND stacks with dipole regions Electricity 0 Active
US11908914B2 Methods of forming semiconductor structures Electricity 0 Active
US11552177B2 PMOS high-K metal gates Electricity 0 Active
US12051734B2 PMOS high-k metal gates Electricity 0 Active
US12114488B2 Enhancing gapfill performance of dram word line Electricity 0 Active
US11996455B2 P-type dipole for P-FET Electricity 0 Active
US10991586B2 In-situ tungsten deposition without barrier layer Electricity 0 Active
US10636705B1 High pressure annealing of metal gate structures Electricity 0 Active
US11932939B2 Lids and lid assembly kits for atomic layer deposition chambers Electricity 0 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.