Film forming method and film forming system
US10199268B2 · kind B2 · utility
1Cited by
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15Claims
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Key dates
| Filing date | Sep 7, 2017 |
| Grant date | Feb 5, 2019 |
| Priority date | — |
| Expiry date | Sep 7, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76877
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a film forming method for forming a cobalt film on a target substrate having a recess formed in a surface thereof to fill the recess with the cobalt film, the recess is partially filled by forming a cobalt film on the target substrate by an ALD method or a CVD method using an organic metal compound gas. The cobalt film is partially etched by supplying an etching gas containing β-diketone gas and NO gas to the target substrate. Then, the recess is further filled by forming a cobalt film on the target substrate by the ALD method or the CVD method using an organic metal compound gas.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.