Sensor for a semiconductor device

US10199291B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Andreas Riegler · Tenneck, AT
• Angelika Koprowski · Klagenfurt, AT
• Mathias Plappert · Finkenstein, AT
• Frank Wolter · Munich, DE

Key dates

• Filing date: Aug 22, 2017
• Grant date: Feb 5, 2019
• Expiry date: Aug 22, 2037

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/64
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A semiconductor arrangement is presented. The semiconductor arrangement comprises a semiconductor body, the semiconductor body including a semiconductor drift region, wherein the semiconductor drift region has dopants of a first conductivity type; a first semiconductor sense region and a second semiconductor sense region, wherein each of the first semiconductor sense region and the second semiconductor sense region is electrically connected to the semiconductor drift region and has dopants of a second conductivity type different from said first conductivity type; a first metal contact comprising a first metal material, the first metal contact being in contact with the first semiconductor sense region, wherein a transition between the first metal contact and the first semiconductor sense region forms a first metal-to-semiconductor transition; a second metal contact comprising a second metal material different from said first metal material, the second metal contact being separated from the first metal contact and in contact with the second semiconductor sense region, a transition between the second metal contact and the second semiconductor sense region forming a second metal-to-sem…