Patent · US Active

SRAM cell with T-shaped contact

US10199380B2 · kind B2 · utility

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6Claims

0Family size

Assignee

TEXAS INSTRUMENTS INCORPORATED · US

Inventors

Theodore W. Houston · Richardson, US
Thomas J. Aton · Dallas, US
Scott Jessen · Allen, US

Key dates

Filing date	Mar 8, 2011
Grant date	Feb 5, 2019
Priority date	—
Expiry date	Dec 5, 2034

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY10S257/903
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

An integrated circuit containing an array of SRAM cells with T-shaped contacts in the inverters, in which drain connecting segments may extend beyond gate connecting segments by a distance greater than 10 percent of a separation distance between ends of opposite drain connecting segments. The drain connecting segments may also extend beyond gate connecting segments by a distance greater than one-third of the width of the gate connecting segments. A process of forming an integrated circuit containing an array of SRAM cells with T-shaped contacts in which drain connecting segments may extend beyond gate connecting segments by a distance greater than 10 percent of a separation distance between ends of opposite drain connecting segments. A process may also form the drain connecting segments to extend beyond gate connecting segments by greater than one-third of the width of the gate connecting segments.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.