Semiconductor device with a guard structure and corresponding methods of manufacture
US10199490B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 8, 2018 |
| Grant date | Feb 5, 2019 |
| Priority date | — |
| Expiry date | Mar 8, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/393
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a guard structure located laterally between a first active area of a semiconductor substrate and a second active area of the semiconductor substrate. The guard structure includes a first doping region located at a front side surface of the semiconductor substrate, and a wiring structure electrically connecting the first doping region to a highly doped portion of a common doping region. The common doping region extends from a backside surface of the semiconductor substrate to at least a part of the front side surface of the semiconductor substrate in contact with the wiring structure of the guard structure. Corresponding methods for forming the semiconductor device are also described.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.