Trisilyl amine derivative, method for preparing the same and silicon-containing thin film using the same
US10202407B2 · kind B2 · utility
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12Claims
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Key dates
| Filing date | Jan 8, 2015 |
| Grant date | Feb 12, 2019 |
| Priority date | — |
| Expiry date | Jan 8, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0228
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided are a novel trisilyl amine derivative, a method for preparing the same, and a silicon-containing thin film using the same, wherein the trisilyl amine derivative, which is a compound having thermal stability, high volatility, and high reactivity and being present in a liquid state at room temperature and under pressure where handling is possible, may form a high purity silicon-containing thin film having excellent physical and electrical properties by various deposition methods.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.