Byeong-il YANG
14Patents
2h-index
31Co-inventors
46Inventor score
Filing activity: Jun 4, 2014 → Jan 17, 2023
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US9245740B2 | Amino-silyl amine compound, method for preparing the same and silicon-containing thin-film using the same | Electricity | 10 | Active |
| US9809608B2 | Cyclodisilazane derivative, method for preparing the same and silicon-containing thin film using the same | Electricity | 4 | Active |
| US9586979B2 | Amino-silyl amine compound, method for preparing the same and silicon-containing thin-film using the same | Chemistry; Metallurgy | 2 | Active |
| US11390635B2 | Composition for depositing silicon-containing thin film and method for producing silicon-containing thin film using the same | Chemistry; Metallurgy | 2 | Active |
| US10202407B2 | Trisilyl amine derivative, method for preparing the same and silicon-containing thin film using the same | Electricity | 1 | Active |
| US9916974B2 | Amino-silyl amine compound and the manufacturing method of dielectric film containing Si—N bond by using atomic layer deposition | Electricity | 1 | Active |
| US10894799B2 | Composition for depositing silicon-containing thin film including disilylamine compound and method for manufacturing silicon-containing thin film using the same | Electricity | 1 | Active |
| US11749522B2 | Composition for depositing silicon-containing thin film containing bis(aminosilyl)alkylamine compound and method for manufacturing silicon-containing thin using the same | Electricity | 0 | Active |
| US11393676B2 | Composition for depositing silicon-containing thin film containing bis(aminosilyl)alkylamine compound and method for manufacturing silicon-containing thin film using the same | Electricity | 0 | Active |
| US12398459B2 | Silicon metal oxide encapsulation film comprising metal or metal oxide in thin film, and manufacturing method therefor | Chemistry; Metallurgy | 0 | Active |
| US11901191B2 | Atomic layer etching method and semiconductor device manufacturing method using the same | Electricity | 0 | Active |
| US12255075B2 | Atomic layer etching method using ligand exchange reaction | Electricity | 0 | Active |
| US11319333B2 | Disilylamine compound, method for preparing the same, and composition for depositing silicon-containing thin film including the same | Chemistry; Metallurgy | 0 | Active |
| US11358974B2 | Silylamine compound, composition for depositing silicon-containing thin film containing the same, and method for manufacturing silicon-containing thin film using the composition | Chemistry; Metallurgy | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.