Method for fabricating semiconductor device
US10204914B2 · kind B2 · utility
0Cited by
1References
8Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | Dec 27, 2017 |
| Grant date | Feb 12, 2019 |
| Priority date | — |
| Expiry date | Dec 27, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/34
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for fabricating semiconductor device includes the steps of: providing a substrate having a memory region and a periphery region; forming a first buried gate and a second buried gate in the substrate on the memory region; forming a first silicon layer on the substrate on the periphery region; forming a stacked layer on the first silicon layer; forming an epitaxial layer on the substrate between the first buried gate and the second buried gate; and forming a second silicon layer on the epitaxial layer on the memory region and the stacked layer on the periphery region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.