Method of forming polysilicon gate structure in image sensor device
US10204960B2 · kind B2 · utility
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3References
20Claims
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Key dates
| Filing date | Sep 17, 2015 |
| Grant date | Feb 12, 2019 |
| Priority date | — |
| Expiry date | Sep 17, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/661
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of fabricating polysilicon gate structure in an image sensor device includes depositing a gate dielectric layer on a surface of a substrate. Then a polysilicon layer is deposited over the gate dielectric layer. Next, a protection film is deposited over the polysilicon layer. A hard mask is formed over the protection film, and the polysilicon gate structure is patterned. Following that, the hard mask is stripped off. The protection film exhibits etching selectivity against the polysilicon layer and has a thickness of between 40 and 60 angstroms. The hard mask is removed by phosphoric acid solution wet etching process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.