Chun-Wei CHIA
17Patents
1h-index
9Co-inventors
39Inventor score
Filing activity: Sep 17, 2015 → Jun 15, 2023
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US10157949B2 | Isolation structure for reducing crosstalk between pixels and fabrication method thereof | Electricity | 2 | Active |
| US11521997B2 | Multi-protrusion transfer gate structure | Electricity | 1 | Active |
| US11756842B2 | Daisy-chain seal ring structure | Electricity | 1 | Active |
| US12176361B2 | Electromagnetic radiation detection method | Electricity | 0 | Active |
| US10714523B2 | Isolation structure and image sensor | Electricity | 0 | Active |
| US12170234B2 | Daisy-chain seal ring structure | Electricity | 0 | Active |
| US11569289B2 | Image sensor having stress releasing structure and method of forming same | Electricity | 0 | Active |
| US11837622B2 | Image sensor comprising polysilicon gate electrode and nitride hard mask | Electricity | 0 | Active |
| US12224297B2 | Method of forming an image sensor having stress releasing structure | Electricity | 0 | Active |
| US10985199B2 | Image sensor having stress releasing structure and method of forming same | Electricity | 0 | Active |
| US12211805B2 | Trench structure for reduced wafer cracking | Electricity | 0 | Active |
| US10879305B2 | Image sensor | Electricity | 0 | Active |
| US12211862B2 | Multi-protrusion transfer gate manufacturing method | Electricity | 0 | Active |
| US11164902B2 | Image sensor having isolation structure | Electricity | 0 | Active |
| US10204960B2 | Method of forming polysilicon gate structure in image sensor device | Electricity | 0 | Active |
| US11444116B2 | Method for forming image sensor | Electricity | 0 | Active |
| US11569288B2 | Image sensor having stress releasing structure and method of forming same | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.