Semiconductor device and manufacturing method thereof
US10204986B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 13, 2017 |
| Grant date | Feb 12, 2019 |
| Priority date | — |
| Expiry date | Oct 13, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device and a manufacturing method thereof are provided. The semiconductor device includes a substrate, a semiconductor nanowire, a gate structure, a first metal nanowire and a second metal nanowire. The semiconductor nanowire is disposed vertically on the substrate. The gate structure surrounds a middle portion of the semiconductor nanowire. The first metal nanowire is located on a side of the semiconductor nanowire and is electronically connected to a lower portion of the semiconductor nanowire. The second metal nanowire is located on the other side of the semiconductor nanowire and is electronically connected to the gate structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.