Method of epitaxial growth shape control for CMOS applications
US10205002B2 · kind B2 · utility
3Cited by
5References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 27, 2017 |
| Grant date | Feb 12, 2019 |
| Priority date | — |
| Expiry date | Aug 6, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6211
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present disclosure generally relate to methods of processing a substrate in an epitaxy chamber. The method includes exposing a substrate having one or more fins to a group IV-containing precursor and a surfactant containing antimony to form an epitaxial film over sidewalls of the one or more fin structures, wherein the surfactant containing antimony is introduced into the epitaxy chamber before epitaxial growth of the epitaxial film, and a molar ratio of the surfactant containing antimony to the group IV-containing precursor is about 0.0001 to about 10.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.