Patent · US Active

Method for forming a semiconductor device with implanted chalcogen atoms

US10205011B2 · kind B2 · utility

0Cited by

1References

13Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Hans-Joachim Schulze · Taufkirchen, DE
Philip Christoph Brandt · Oberhaching, DE
Andre Rainer Stegner · Unterhaching, DE

Key dates

Filing date	Feb 12, 2016
Grant date	Feb 12, 2019
Priority date	—
Expiry date	Oct 28, 2036

Classification

Technology area (CPC H)Electricity
CPC primaryH10D64/62
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

Some embodiments relate to a method for forming a semiconductor device. The method includes forming a source region of a field effect transistor structure in a semiconductor substrate. The method further includes forming an oxide layer. The method also includes incorporating atoms of at least one atom type of a group of atom types into at least a part of the source region of the field effect transistor structure after forming the oxide layer. The group of atom types includes chalcogen atoms, silicon atoms and argon atoms.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.