Inventor · Unterhaching, DE

Andre Rainer Stegner

20Patents
3h-index
29Co-inventors
59Inventor score

Filing activity: Nov 30, 2012 → Mar 10, 2022

Most-cited inventions

PatentTitleAreaCited byStatus
US8853774B2 Semiconductor device including trenches and method of manufacturing a semiconductor device Electricity 13 Active
US9685504B2 Semiconductor to metal transition for semiconductor devices Electricity 4 Active
US9443971B2 Semiconductor to metal transition Electricity 4 Active
US11063142B2 Semiconductor device including silicon carbide body and method of manufacturing Electricity 1 Active
US11094779B2 Semiconductor device having an edge termination region comprising a first edge termination region of a second conductivity type adjacent to a second edge termination region of a first conductivity type Electricity 1 Active
US10205011B2 Method for forming a semiconductor device with implanted chalcogen atoms Electricity 0 Active
US9293524B2 Semiconductor device with a field ring edge termination structure and a separation trench arranged between different field rings Electricity 0 Active
US12107141B2 Semiconductor device having a silicon carbide drift zone over a silicon carbide field stop zone Electricity 0 Active
US11302795B2 Method of manufacturing a semiconductor device and semiconductor device Electricity 0 Active
US10665687B2 Method for processing a semiconductor device and semiconductor device Electricity 0 Active
US10475911B2 Semiconductor device having a source region with chalcogen atoms Electricity 0 Active
US10211325B2 Semiconductor device including undulated profile of net doping in a drift zone Electricity 0 Active
US10424636B2 Power semiconductor devices, semiconductor devices and a method for adjusting a number of charge carriers Electricity 0 Active
US10497801B2 Method of manufacturing a semiconductor device having an undulated profile of net doping in a drift zone Electricity 0 Active
US11282926B2 Semiconductor device with a semiconductor body of silicon carbide Electricity 0 Active
US10943979B2 Semiconductor device having a semiconductor body composed of silicon carbide Electricity 0 Active
US9954068B2 Method of forming a transistor, method of patterning a substrate, and transistor Electricity 0 Active
US9653296B2 Method for processing a semiconductor device and semiconductor device Electricity 0 Active
US9647100B2 Semiconductor device with auxiliary structure including deep level dopants Electricity 0 Active
US11264464B2 Silicon carbide devices and methods for forming silicon carbide devices Electricity 0 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.