Magnetic tunnel junction (MTJ) devices with varied breakdown voltages in different memory arrays fabricated in a same semiconductor die to facilitate different memory applications
US10210920B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 27, 2018 |
| Grant date | Feb 19, 2019 |
| Priority date | — |
| Expiry date | Mar 27, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/10
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Magnetic tunnel junction (MTJ) devices with varied breakdown voltages in different memory arrays fabricated in a same semiconductor die to facilitate different memory applications are disclosed. In exemplary aspects disclosed herein, MTJ devices are fabricated in a semiconductor die to provide at least two different memory arrays. MTJ devices in each memory array are fabricated to have different breakdown voltages. For example, it may be desired to fabricate a One-Time-Programmable (OTP) memory array in the semiconductor die using MTJ devices having a first, lower breakdown voltage, and a separate magneto-resistive random access memory (MRAM) in a same semiconductor die with MTJ devices having a higher breakdown voltage. Thus, in this example, lower breakdown voltage MTJ devices in OTP memory array require less voltage to program, while higher breakdown voltage MTJ devices in MRAM can maintain a desired write operation margin to avoid or reduce write operations causing dielectric breakdown.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.