Method for photo-lithographic processing in semiconductor device manufacturing
US10211050B2 · kind B2 · utility
1Cited by
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4Claims
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Key dates
| Filing date | Aug 16, 2016 |
| Grant date | Feb 19, 2019 |
| Priority date | — |
| Expiry date | Aug 16, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0276
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
There is provided a semiconductor device manufacturing method, including: a film forming process in which, by supplying a solution for modifying a surface layer of a resist to a target object having a resist pattern and allowing the solution to infiltrate into the resist, a film having elasticity and having no compatibility with the resist is formed in the surface layer of the resist; and a heating process in which the target object having the film formed thereon is heated.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.