Chamber conditioning for remote plasma process
US10211099B2 · kind B2 · utility
22Cited by
86References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 19, 2016 |
| Grant date | Feb 19, 2019 |
| Priority date | — |
| Expiry date | Dec 19, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/3321
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The methods, systems and apparatus described herein relate to chamber conditioning for remote plasma processes, in particular remote nitrogen-based plasma processes. Certain implementations of the disclosure relate to remote plasma inhibition processes for feature fill that include chamber conditioning. Embodiments of the disclosure relate to exposing remote plasma processing chambers to fluorine species prior to nitrogen-based remote plasma processing of substrates such as semiconductor wafers. Within-wafer uniformity and wafer-to-wafer uniformity is improved.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.