Air gap over transistor gate and related method
US10211146B2 · kind B2 · utility
15Cited by
14References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 12, 2016 |
| Grant date | Feb 19, 2019 |
| Priority date | — |
| Expiry date | May 12, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L23/53295
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device may include a transistor gate in a device layer; an interconnect layer over the device layer; and an air gap extending through the interconnect layer to contact an upper surface of the transistor gate. The air gap provides a mechanism to reduce both on-resistance and off-capacitance for applications using SOI substrates such as radio frequency switches.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.