Power semiconductor module having a direct copper bonded substrate and an integrated passive component, and an integrated power module

US10211158B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Olaf Hohlfeld · Warstein, DE
• Juergen Hoegerl · Regensburg, DE
• Gottfried Beer · Nittendorf, DE
• Magdalena Hoier · Regensburg, DE
• Georg Meyer-Berg · Birkenfeld, DE

Key dates

• Filing date: Oct 31, 2014
• Grant date: Feb 19, 2019
• Expiry date: Oct 31, 2034

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L24/25
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A power semiconductor module includes a direct copper bonded (DCB) substrate having a ceramic substrate, a first copper metallization bonded to a first main surface of the ceramic substrate and a second copper metallization bonded to a second main surface of the ceramic substrate opposite the first main surface. The power semiconductor module further includes a power semiconductor die attached the first copper metallization, a passive component attached the first copper metallization, a first isolation layer encapsulating the power semiconductor die and the passive component, a first structured metallization layer on the first isolation layer, and a first plurality of electrically conductive vias extending through the first isolation layer from the first structured metallization layer to the power semiconductor die and the passive component. An integrated power module and a method of manufacturing the integrated power module are also provided.