Semiconductor device and method of manufacturing the same
US10211166B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Sep 5, 2017 |
| Grant date | Feb 19, 2019 |
| Priority date | — |
| Expiry date | Sep 5, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B43/27
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
According to one embodiment, a semiconductor device includes a first semiconductor circuit layer including a first conductive layer, a second semiconductor circuit layer including a second conductive layer, and a third semiconductor circuit layer between the first semiconductor circuit layer and the second semiconductor circuit layer, the third semiconductor circuit layer including a third conductive layer in contact with the first conductive layer, a fourth conductive layer in contact with the second conductive layer, and a fifth conductive layer in contact with the third conductive layer and electrically connected to the fourth conductive layer. The fifth conductive layer has a width that is narrower than a width of the third conductive layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.