Patent · US Active

Ferroelectric memory device and fabrication method thereof

US10211312B2 · kind B2 · utility

12Cited by
0References
22Claims
0Family size

Assignee

Inventors

Key dates

Filing dateAug 5, 2016
Grant dateFeb 19, 2019
Priority date—
Expiry dateAug 5, 2036

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L21/02568
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

The disclosed technology generally relates to semiconductor devices, and more particularly to a non-volatile ferroelectric memory device and to methods of fabricating the same. In one aspect, a non-volatile memory device includes a high dielectric constant layer (high-k) layer or a metal layer on a semiconductor substrate. The non-volatile memory device additionally includes a two-dimensional (2D) semiconductor channel layer interposed between the high-k layer or metal layer and a ferroelectric layer. The non-volatile memory device additionally includes a metal gate layer on the ferroelectric layer, and further includes a source region and a drain region each electrically coupled to the 2D semiconductor channel layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.