Patent · US Active

Semiconductor device including undulated profile of net doping in a drift zone

US10211325B2 · kind B2 · utility

0Cited by

2References

14Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Elmar Falck · Hohenbrunn, DE
Andreas Haertl · Munich, DE
Manfred Pfaffenlehner · Birkenfeld, DE
Francisco Javier Santos Rodriguez · Villach, AT
Daniel Schloegl · Villach, AT
Hans-Joachim Schulze · Taufkirchen, DE
Andre Rainer Stegner · Unterhaching, DE
Johannes Georg Laven · Taufkirchen, DE

Key dates

Filing date	Jan 28, 2014
Grant date	Feb 19, 2019
Priority date	—
Expiry date	May 11, 2035

Classification

Technology area (CPC H)Electricity
CPC primaryH10D62/393
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A semiconductor device includes a semiconductor body having opposite first and second sides. The semiconductor device further includes a drift zone in the semiconductor body between the second side and a pn junction. A profile of net doping of the drift zone along at least 50% of a vertical extension of the drift zone between the first and second sides is undulated and includes doping peak values between 1×1013 cm−3 and 5×1014 cm−3. A device blocking voltage Vbr is defined by a breakdown voltage of the pn junction between the drift zone and a semiconductor region of opposite conductivity type that is electrically coupled to the first side of the semiconductor body.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.