Chip with phase change memory and magnetoresistive random access memory
US10217505B1 · kind B1 · utility
1Cited by
2References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 31, 2017 |
| Grant date | Feb 26, 2019 |
| Priority date | — |
| Expiry date | Aug 31, 2037 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/71
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Apparatuses, systems, and methods are disclosed for a chip with phase change memory (PCM) and magnetoresistive random access memory (MRAM). An apparatus includes a semiconductor circuit formed over a substrate of a chip. An apparatus includes a PCM array formed over a semiconductor circuit. An apparatus includes an MRAM array formed over a semiconductor circuit.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.