Production of adhesion structures in dielectric layers using photoprocess technology and devices incorporating adhesion structures

US10217644B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Thomas Grille · Villach, AT
• Ursula Hedenig · Villach, AT
• Joern Plagmann · Munich, DE
• Helmut Schoenherr · Villach, AT
• Ralph Muth · Munich, DE

Key dates

• Filing date: Jul 24, 2012
• Grant date: Feb 26, 2019
• Expiry date: Dec 27, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/00014
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

In various aspects of the disclosure, a semiconductor device including at least one semiconductor die; a dielectric layer adjoining the semiconductor die; geometric structures formed in the dielectric layer; and a conductive layer deposited over the dielectric layer, wherein the conductive layer is at least partially located over the geometric structures.