Memory cell for non-volatile memory system
US10217795B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 23, 2017 |
| Grant date | Feb 26, 2019 |
| Priority date | — |
| Expiry date | Aug 23, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8833
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A non-volatile storage apparatus is proposed that includes a plurality of serially connected non-volatile reversible resistance-switching memory cells, a plurality of word lines such that each of the memory cells is connected to a different word line, a bit line connected to a first end of the serially connected memory cells and a switch connected to a second end of the serially connected memory cells. In one embodiment, the memory cells include a reversible resistance-switching structure comprising a first material, a second material and a reversible resistance-switching interface between the first material and the second material, a channel, and means for switching current between current flowing through the channel and current flowing through the reversible resistance-switching interface in order to program and read the reversible resistance-switching interface. A process for manufacturing the memory is also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.