Patent · US Active

Method of manufacturing a semiconductor device having electrode trenches, isolated source zones and separation structures

US10217837B2 · kind B2 · utility

0Cited by

10References

20Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Roman Baburske · Otterfing, DE
Matteo Dainese · Munich, DE
Peter Lechner · Vaterstetten, DE
Hans-Joachim Schulze · Taufkirchen, DE
Johannes Georg Laven · Taufkirchen, DE

Key dates

Filing date	Dec 4, 2017
Grant date	Feb 26, 2019
Priority date	—
Expiry date	Dec 4, 2037

Classification

Technology area (CPC H)Electricity
CPC primaryH10D62/106
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A semiconductor device includes a semiconductor mesa having source zones and at least one body zone forming first pn junctions with the source zones and a second pn junction with a drift zone. Electrode structures are provided on opposite sides of the semiconductor mesa, at least one of the electrode structures having a gate electrode configured to control a charge carrier flow through the at least one body zone. A separation region is arranged along an extension direction of the semiconductor mesa. In the separation region, the semiconductor mesa has a constricted portion that is partially or completely oxidized. Additional semiconductor device embodiments are described.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.