Patent · US Active

Method for making a semiconductor device with self-aligned inner spacers

US10217842B2 · kind B2 · utility

3Cited by

1References

13Claims

0Family size

Assignee

COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventors

Shay Reboh · Grenoble, FR
Emmanuel Augendre · Montbonnot-Saint-Martin, FR
Remi Coquand · Chambéry, FR

Key dates

Filing date	Dec 11, 2017
Grant date	Feb 26, 2019
Priority date	—
Expiry date	Dec 11, 2037

Classification

Technology area (CPC H)Electricity
CPC primaryH10D64/015
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method for making a semiconductor device, including:

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.