Interconnect structure with adhesive dielectric layer and methods of forming same
US10224286B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 30, 2018 |
| Grant date | Mar 5, 2019 |
| Priority date | — |
| Expiry date | Jan 30, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/117
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Embodiments of the disclosure provide an interconnect structure including: a first die having a first surface and an opposing second surface, and a groove within first surface of the first die; an adhesive dielectric layer mounted to the opposing second surface of the first die; a second die having a first surface mounted to the adhesive dielectric layer, and an opposing second surface, wherein the adhesive dielectric layer is positioned directly between the first and second dies; and a through-semiconductor via (TSV) including a first TSV metal extending from the first surface of the first die to the adhesive dielectric layer, and a second TSV metal substantially aligned with the first TSV metal and extending from the adhesive dielectric layer to the opposing second surface of the second die, wherein the TSV includes a metal-to-metal bonding interface between the first and second TSV metals within the adhesive dielectric layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.