Patent · US Active

Method of producing semiconductor chips that efficiently dissipate heat

US10224393B2 · kind B2 · utility

1Cited by

6References

9Claims

0Family size

Assignee

OSRAM Opto Semiconductors GmbH · DE

Inventors

Ewald Karl Michael Günther · Regenstauf, DE
Andreas Plößl · Regensburg, DE
Heribert Zull · Regensburg, DE
Thomas Nicolas Emmanuel Veit · Leipzig, DE
Mathias Kämpf · Burglengenfeld, DE
Jens Dennemarck · Regensburg, DE
Bernd Böhm · Regensburg, DE
Korbinian Perzlmaier · Regensburg, DE

Key dates

Filing date	Jun 6, 2017
Grant date	Mar 5, 2019
Priority date	—
Expiry date	Jun 6, 2037

Classification

Technology area (CPC H)Electricity
CPC primaryH10H29/10
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method of producing a plurality of semiconductor chips includes a) providing a carrier substrate having a first major face and a second major face opposite the first major face; b) forming a diode structure between the first major face and the second major face, the diode structure electrically insulating the first major face from the second major face at least with regard to one polarity of an electrical voltage; c) arranging a semiconductor layer sequence on the first major face of the carrier substrate; and d) singulating the carrier substrate with the semiconductor layer sequence into a plurality of semiconductor chips.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.