Patent · US Active

Two-terminal reversibly switchable memory device

US10224480B2 · kind B2 · utility

2Cited by

123References

18Claims

0Family size

Assignee

Hefei Reliance Memory Limited · CN

Inventors

Darrell Rinerson · Cupertino, US
Christophe J. Chevallier · Palo Alto, US
Wayne Kinney · Emmett, US
Roy Lambertson · Los Altos, US
John Sanchez · Palo Alto, US
Lawrence Schloss · Palo Alto, US
Philip Swab · Santa Rosa, US
Edmond R. Ward · Monte Sereno, US

Key dates

Filing date	Oct 30, 2017
Grant date	Mar 5, 2019
Priority date	—
Expiry date	Oct 30, 2037

Classification

Technology area (CPC G)Physics
CPC primaryG11C2213/79
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

A memory using mixed valence conductive oxides is disclosed. The memory includes a mixed valence conductive oxide that is less conductive in its oxygen deficient state and a mixed electronic ionic conductor that is an electrolyte to oxygen and promotes an electric filed to cause oxygen ionic motion.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.