Suppression of program disturb with bit line and select gate voltage regulation
US10229745B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 23, 2018 |
| Grant date | Mar 12, 2019 |
| Priority date | — |
| Expiry date | Jan 23, 2038 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/30
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Techniques for suppression of program disturb in flash memory devices are described herein. In an example embodiment, an apparatus comprises a flash memory device coupled to a microprocessor. The flash memory device comprises rows and columns of memory cells, where the memory cells in each row are coupled to a source line and to a select-gate (SG) line, and the memory cells in each column are coupled to a respective bit line (BL). A control circuit in the flash memory device is configured to regulate both a first voltage, of a selected SG line, and a second voltage, of an unselected BL, independently of a power supply voltage of the flash memory device, and to adjust at least one of the first voltage and the second voltage based on a measure of an operating temperature of the flash memory device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.