Plasma etching method
US10229838B2 · kind B2 · utility
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6Claims
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Key dates
| Filing date | Sep 12, 2017 |
| Grant date | Mar 12, 2019 |
| Priority date | — |
| Expiry date | Sep 12, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/035
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A plasma etching method for etching a film containing a tungsten element using plasma, wherein the film containing a tungsten element is etched by using a gas containing a silicon element, a gas containing a halogen element, and a gas containing a carbon element and an oxygen element.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.