Method of etching porous film
US10236162B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 29, 2017 |
| Grant date | Mar 19, 2019 |
| Priority date | — |
| Expiry date | Nov 29, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31116
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method of etching a porous film is provided. The method includes supplying a first gas into a processing chamber of a plasma processing apparatus in which an object to be processed including a porous film is accommodated, and generating a plasma of a second gas for etching the porous film in the processing chamber. The first gas is a processing gas having a saturated vapor pressure of less than or equal to 133.3 Pa at a temperature of a stage on which the object is mounted in the processing chamber, or includes the processing gas. In the step of supplying the first gas, no plasma is generated, and a partial pressure of the processing gas which is supplied into the processing chamber is set to be greater than or equal to 20% of the saturated vapor pressure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.