Method for wafer outgassing control
US10236190B2 · kind B2 · utility
1Cited by
2References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 6, 2017 |
| Grant date | Mar 19, 2019 |
| Priority date | — |
| Expiry date | May 6, 2037 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P80/30
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Embodiments disclosed herein generally relate to methods for controlling substrate outgassing such that hazardous gasses are eliminated from a surface of a substrate after a III-V epitaxial growth process or an etch clean process, and prior to additional processing. An oxygen containing gas is flowed to a substrate in a load lock chamber, and subsequently a non-reactive gas is flowed to the substrate in the load lock chamber. As such, hazardous gases and outgassing residuals are decreased and/or removed from the substrate such that further processing may be performed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.