Method for manufacturing a semiconductor device having a fin located on a substrate

US10236216B2 · kind B2 · utility

Assignees

• Semiconductor Manufacturing International (Shanghai) Corporation · CN
• SMIC ADVANCED TECHNOLOGY RESEARCH & DEVELOPMENT (SHANGHAI) Corp. · CN
• IMEC INTERNATIONAL · BE

Inventors

• Hai Zhao · Yangchun City, CN
• Yang Liu · Tangxia, CN
• Gang Mao · Shanghai, CN
• Cheng-Jui Yang · Hsinchu, TW
• Yongmeng Lee · Shanghai, CN
• Shaofeng Yu · Plano, US

Key dates

• Filing date: Oct 3, 2017
• Grant date: Mar 19, 2019
• Expiry date: Oct 3, 2037

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/8325

Abstract

The present disclosure relates to the technical field of semiconductor processes, and discloses a semiconductor device and a manufacturing method therefor. The semiconductor device includes a substrate; two fins located on the substrate and extending along a first direction; an isolation material layer surrounding the fins, comprising a first isolation regions located at an end region between the two fins along the first direction, and a second isolation region located at sides of the fins along a second direction that is different from the first direction, wherein an upper surface of the first isolation region substantially align with an upper surfaces of the fins, and an upper surface of the second isolation region is lower than the upper surface of the fins; and a first insulating layer on the first isolation region.