Tunnel transistor
US10236364B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 22, 2018 |
| Grant date | Mar 19, 2019 |
| Priority date | — |
| Expiry date | Jun 22, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6219
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A tunnel field-effect transistor having source and drain contacts made from different electrically conductive materials enables independent optimization of contact resistance on the source and drain sides of the transistor. Dielectric caps on the gate electrode, source contact and drain contact made from different materials allow the selective removal of portions of the caps during gate, source and drain wiring. A wiring strap can be formed across the gate and drain to electrically connect two source contacts together. Multiple drain contacts or multiple gate electrodes may alternatively be electrically connected by wiring straps. Strap wiring facilitates placing transistors in closer proximity to increase the number of transistors for a given chip area.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.