Systems and methods for ESC temperature control
US10237916B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 30, 2015 |
| Grant date | Mar 19, 2019 |
| Priority date | — |
| Expiry date | Jul 7, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67248
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
This disclosure relates to a temperature control system that may be used in a plasma processing system that treats microelectronic substrates using plasma. The temperature control system may include a heating array disposed adjacent to the microelectronic substrate and that may selectively generate heat at different portions of the microelectronic substrate. The heating array may include heating modules that selectively generate heat depending upon a breakover voltage of a Silicon Diode for Alternating Current (SIDAC). The amount of heat generated heat may depend upon the resistance of the heating module and the duty cycle of the variable voltage signal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.