Patent · US Active

Memory arrays, and methods of forming memory arrays

US10242726B1 · kind B1 · utility

1Cited by

9References

22Claims

0Family size

Assignee

Micron Technology, Inc. · US

Inventors

Sanh D. Tang · Boise, US
Kuo-Chen Wang · Boise, US
Martin C. Roberts · Boise, US
Diem Thy N. Tran · Garden City, US
Hideki Gomi · Boise, US
Fredrick Fishburn · Rio Del Mar, US
Srinivas Pulugurtha · Boise, US
Michel Koopmans · Boise, US
Eiji Hasunuma · Hiroshima, JP

Key dates

Filing date	Nov 5, 2018
Grant date	Mar 26, 2019
Priority date	—
Expiry date	Nov 5, 2038

Classification

Technology area (CPC H)Electricity
CPC primaryH10B12/315
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

Some embodiments include an assembly having active material structures arranged in an array having rows and columns. Each of the active material structures has a first side which includes a bit contact region, and has a second side which includes a cell contact region. Each of the bit contact regions is coupled with a first redistribution pad. Each of the cell contact regions is coupled with a second redistribution pad. The first redistribution pads are coupled with bitlines, and the second redistribution pads are coupled with programmable devices. Some embodiments include methods of forming memory arrays.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.