Patent · US Active

Energy filter for processing a power semiconductor device

US10242840B2 · kind B2 · utility

0Cited by

5References

16Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Roland Rupp · Achern, DE
Andre Brockmeier · Villach, AT

Key dates

Filing date	May 23, 2017
Grant date	Mar 26, 2019
Priority date	—
Expiry date	May 23, 2037

Classification

Technology area (CPC H)Electricity
CPC primaryH01J2237/31711
WIPO fieldElectrical machinery, apparatus, energy
WIPO sectorElectrical engineering

Abstract

A method of producing an implantation ion energy filter, suitable for processing a power semiconductor device. In one example, the method includes creating a preform having a first structure; providing an energy filter body material; and structuring the energy filter body material by using the preform, thereby establishing an energy filter body having a second structure.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.