Selective dry etching of metal films comprising multiple metal oxides
US10242885B2 · kind B2 · utility
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4References
20Claims
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Key dates
| Filing date | May 26, 2017 |
| Grant date | Mar 26, 2019 |
| Priority date | — |
| Expiry date | May 26, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02639
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A process to selectively etch a substrate surface comprising multiple metal oxides comprising exposing the substrate surface to a halogenation agent, and then exposing the substrate surface to a ligand transfer agent. The etch rate of the metals in the multiple metal oxides is substantially uniform.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.