Inventor · Santa Clara, CA, US

Benjamin Schmiege

26Patents
6h-index
47Co-inventors
61Inventor score

Filing activity: Mar 6, 2014 → Jan 20, 2020

Most-cited inventions

PatentTitleAreaCited byStatus
US9309598B2 Oxide and metal removal Electricity 539 Active
US9449843B1 Selectively etching metals and metal nitrides conformally Chemistry; Metallurgy 349 Active
US10083834B2 Methods of forming self-aligned vias Electricity 60 Active
US10465294B2 Oxide and metal removal Electricity 25 Active
US9528183B2 Cobalt removal for chamber clean or pre-clean process Performing Operations; Transporting 24 Active
US9390940B2 Methods of etching films comprising transition metals Electricity 12 Active
US9896770B2 Methods of etching films with reduced surface roughness Electricity 2 Active
US9514933B2 Film deposition using spatial atomic layer deposition or pulsed chemical vapor deposition Electricity 2 Active
US10643840B2 Selective deposition defects removal by chemical etch Electricity 2 Active
US9881787B2 Deposition methods for uniform and conformal hybrid titanium oxide films Electricity 2 Active
US9540736B2 Methods of etching films with reduced surface roughness Electricity 2 Active
US10906925B2 Ruthenium precursors for ALD and CVD thin film deposition and uses thereof Chemistry; Metallurgy 2 Active
US10577386B2 Ruthenium precursors for ALD and CVD thin film deposition and uses thereof Chemistry; Metallurgy 2 Active
US10000853B2 System and method for controllable non-volatile metal removal Electricity 1 Active
US9611552B2 System and method for controllable non-volatile metal removal Electricity 1 Active
US9005704B2 Methods for depositing films comprising cobalt and cobalt nitrides Electricity 0 Active
US10760159B2 Methods and apparatus for depositing yttrium-containing films Chemistry; Metallurgy 0 Active
US11094544B2 Methods of forming self-aligned vias Electricity 0 Active
US10633743B2 System and method for controllable non-volatile metal removal Electricity 0 Active
US10643838B2 In-situ formation of non-volatile lanthanide thin film precursors and use in ALD and CVD Electricity 0 Active
US10233547B2 Methods of etching films with reduced surface roughness Electricity 0 Active
US10410865B2 Methods of forming self-aligned vias Electricity 0 Active
US10323054B2 Precursors for deposition of metal, metal nitride and metal oxide based films of transition metals Chemistry; Metallurgy 0 Active
US10242885B2 Selective dry etching of metal films comprising multiple metal oxides Electricity 0 Active
US10297462B2 Methods of etching films comprising transition metals Electricity 0 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.