Polar, chiral, and non-centro-symmetric ferroelectric materials, memory cells including such materials, and related devices and methods
US10242989B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 20, 2014 |
| Grant date | Mar 26, 2019 |
| Priority date | — |
| Expiry date | May 20, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/689
Abstract
A ferroelectric memory device includes a plurality of memory cells. Each of the memory cells comprises at least one electrode and a ferroelectric crystalline material disposed proximate the at least one electrode. The ferroelectric crystalline material is polarizable by an electric field capable of being generated by electrically charging the at least one electrode. The ferroelectric crystalline material comprises a polar and chiral crystal structure without inversion symmetry through an inversion center. The ferroelectric crystalline material does not consist essentially of an oxide of at least one of hafnium (Hf) and zirconium (Zr).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.